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US 9,040,895 B2Granted
Photoelectric conversion apparatus and imaging system using the same
AssigneeCanon Kabushiki Kaisha
InventorsYasuhiro Kawabata, Hideaki Takada
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Abstract
A photoelectric conversion apparatus of the present invention includes a first semiconductor region functioning as a barrier against signal charges between a first and a second photoelectric conversion element, and a second semiconductor region that has a width narrower than that of the first semiconductor region and functions as a barrier against signal charges between a first and the third photoelectric conversion element. A region with a low barrier is provided at least a part between the first and the second photoelectric conversion element.
Claims28
A photoelectric conversion apparatus comprising:
- a first photoelectric conversion element having a semiconductor region of a first conductivity type capable of accumulating a signal charge;
- a second photoelectric conversion element adjacent to the first photoelectric conversion element along a first direction, the second photoelectric conversion element having a semiconductor region of the first conductivity type;
- a third photoelectric conversion element adjacent to the first photoelectric conversion element along a second direction that crosses the first direction, the third photoelectric conversion element having a semiconductor region of the first conductivity type;
- a first semiconductor region of a second conductivity type opposite to the first conductivity type arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the first semiconductor region having a first width;
- a second semiconductor region of the second conductivity type arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the third photoelectric conversion element, the second semiconductor region having a second width narrower than the first width;
- and
- a third semiconductor region arranged adjacent to the first semiconductor region along a third direction crossing the first direction, and arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the third semiconductor region having a potential for the signal charge lower than that of the first semiconductor region.
4 more elements
A photoelectric conversion apparatus comprising:
- a semiconductor substrate;
- a first photoelectric conversion element, including a semiconductor region of a first conductivity type capable of accumulating a signal charge, the semiconductor region formed in the semiconductor substrate;
- a second photoelectric conversion element adjacent to the first photoelectric conversion element along a first direction, including a semiconductor region of the first conductivity type, the semiconductor region formed in the semiconductor substrate;
- a third photoelectric conversion element adjacent to the first photoelectric conversion element along a second direction different from the first direction, including a semiconductor region of the first conductivity type, the semiconductor region formed in the semiconductor region formed in the semiconductor substrate;
- a first semiconductor region of a second conductivity type opposite to the first conductivity type formed in the semiconductor substrate, arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the first semiconductor region having a first width;
- a second semiconductor region of the second conductivity type formed in the semiconductor substrate, arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the third photoelectric conversion element, the second semiconductor region having a second width narrower than the first width;
- and
- a portion for a charge path between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the portion being arranged adjacent to the first semiconductor region along a direction across the first direction, the portion extending from the semiconductor region of the first conductivity type of the first photoelectric conversion element to the semiconductor region of the first conductivity type of the second photoelectric conversion element.
5 more elements
A photoelectric conversion apparatus comprising:
- a first photoelectric conversion element having a semiconductor region of a first conductivity type capable of accumulating a signal charge;
- a second photoelectric conversion element adjacent to the first photoelectric conversion element along a first direction, the second photoelectric conversion element having a semiconductor region of the first conductivity type;
- a third photoelectric conversion element adjacent to the first photoelectric conversion element along a second direction that crosses the first direction, the third photoelectric conversion element having a semiconductor region of the first conductivity type;
- a first semiconductor region of a second conductivity type opposite to the first conductivity type arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the first semiconductor region having a first width;
- a second semiconductor region of the second conductivity type arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the third photoelectric conversion element, the second semiconductor region having a second width narrower than the first width;
- and
- a third semiconductor region of the second conductivity type arranged adjacent to the first semiconductor region along a third direction crossing the first direction, and arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the third semiconductor region having an impurity concentration lower than an impurity concentration of the second semiconductor region.
4 more elements
Dependencies are inferred from the claim text.