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US 9,040,434 B2Granted
Film deposition method and film deposition apparatus
AssigneeTokyo Electron Limited
InventorHitoshi Kato
Life of this patent
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Abstract
A film deposition method includes a step of condensing hydrogen peroxide on a substrate including a concave portion formed in a surface thereof by supplying a gas containing the hydrogen peroxide, and a step of supplying a silicon-containing gas reactable with the hydrogen peroxide to the substrate having the hydrogen peroxide condensed thereon.
Claims5
A film deposition method, comprising steps of:
- condensing hydrogen peroxide on a substrate including a concave portion formed in a surface thereof by supplying a gas containing the hydrogen peroxide;
- evaporating the hydrogen peroxide condensed on the surface of the substrate and an inner surface on a top side of the concave portion while leaving the hydrogen peroxide condensed on an inner surface on a bottom side and on a bottom surface of the concave portion by supplying an inactive gas to the substrate, after condensing the hydrogen peroxide on the substrate;
- and
- supplying a silicon-containing gas reactable with the hydrogen peroxide condensed on the inner surface on the bottom side and on the bottom surface of the concave portion to the substrate, after evaporating the hydrogen peroxide condensed on the surface of the substrate and the inner surface on the top side of the concave portion.
1 more element
Dependencies are inferred from the claim text.