Photo resist trimmed line end space

A method for forming a line end space structure, comprising:

• forming a hard mask (HM) region above a base region in which a metal line is formed;
• forming a second HM region above the HM region;
• patterning the second HM region to form a patterned second HM region, the patterned second HM region defining a line end space structure;
• forming a spacer structure above the HM region;
• removing at least some of the HM region not covered by the patterned second HM region and not covered by the spacer structure to form a patterned HM region;
• and
• removing at least some of the base region not covered by the patterned HM region to form the line end space structure.

A method for forming a line end space structure, comprising:

• forming a hard mask (HM) region above a base region in which a metal line is formed;
• forming a second HM region above the HM region;
• patterning the second HM region to form a patterned second HM region;
• forming a trim photo resist (PR) region above the patterned second HM region;
• forming a window within the trim PR region to expose a portion of the patterned second HM region;
• removing the portion of the patterned second HM region to form a second patterned second HM region, the second patterned second HM region having a length that is less than a length of the patterned second HM region;
• patterning the HM region using the second patterned second HM region to form a patterned HM region;
• and
• removing at least some of the base region not covered by the patterned HM region to form the line end space structure.