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US 9,040,430 B2Granted
Method of stripping organic mask with reduced damage to low-K film
AssigneeLam Research Corporation
InventorsJohn M. Nagarah, Gerardo Delgadino
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Abstract
A method for stripping an organic mask above a porous low-k dielectric film is provided. A steady state flow of a stripping gas, comprising CO2 and CH4 is provided. The stripping gas is formed into a plasma, wherein the plasma strips at least half the organic mask and protects the porous low-k dielectric film, for a duration of providing the steady state flow of the stripping gas.
Claims16
A method for processing an amorphous carbon mask above a hardmask layer above a porous low-k dielectric film, comprising:
- etching features into the hardmask layer through the amorphous carbon mask;
- stripping the amorphous carbon mask after etching features into the hardmask layer, comprising:
- providing a steady state flow of a stripping gas, comprising a stripping component and a hydrocarbon or fluorocarbon;
- and
- forming the stripping gas into a plasma, wherein the plasma strips the-amorphous carbon mask and protects the porous low-k dielectric film;
- etching features into the porous low-k dielectric film through the hardmask layer after stripping the amorphous carbon mask.
3 more elements
Dependencies are inferred from the claim text.