Method of plasma etching
AssigneeSPTS Technologies Limited
InventorsHuma Ashraf, Anthony Barker
Life of this patent
Estimating the term…
Abstract
A method of plasma etching a silicon carbide workpiece includes forming a mask on a surface of the silicon carbide workpiece, performing an initial plasma etch on the masked surface using a first set of process conditions, wherein the plasma is produced using an etchant gas mixture which includes i) oxygen and ii) at least one fluorine rich gas which is present in the etchant gas mixture at a volume ratio of less than 50%, and subsequently performing a bulk plasma etch process using a second set of process conditions which differ from the first set of process conditions.
Claims17
A method of plasma etching a silicon carbide wafer, including the steps of:
- forming a mask on a surface of the silicon carbide wafer;
- performing an initial plasma etch comprising etching the masked surface using plasma under a first set of process conditions, wherein the plasma is produced using an etchant gas mixture which includes i) oxygen and ii) at least one fluorine rich gas which is present in the etchant gas mixture at a volume ratio of less than 50%;
- and
- subsequently performing a bulk plasma etch process comprising etching the silicon carbide wafer using plasma under a second set of process conditions which differ from the first set of process conditions.
Dependencies are inferred from the claim text.