Method for manufacturing semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorsMasatoshi Koyama, Kazuaki Matsuura, Tsutomu Komatani
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region, which crosses the inactive region to electrically connect the first active region to the second active region, in a semiconductor layer; forming an insulating layer on the semiconductor layer; and forming an opening selectively in the insulating layer by dry etching.
Claims9
A method for manufacturing a semiconductor device comprising:
- forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region;
- wherein the inactive region surrounds the first active region and the second active region surrounds the inactive region;
- wherein the third active region is formed directly in the inactive region so as to directly connect the first active region to the second active region, in a semiconductor layer;
- forming an insulating layer on the semiconductor layer;
- forming an opening selectively in the insulating layer by dry etching.
A method for manufacturing a semiconductor device comprising:
- forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region,
- wherein the inactive region surrounds the first active region and the second active region surrounds the inactive region;
- wherein the third active region is formed directly in the inactive region so as to directly connect the first active region to the second active region, in a semiconductor layer;
- and
- applying dry-etching by RIE, ICP etching, or ECR etching.
Dependencies are inferred from the claim text.