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US 9,040,424 B2Granted
Methods of forming single crystal silicon structures and semiconductor device structures including single crystal silicon structures
AssigneeMicron Technology, Inc.
InventorsJanos Fucsko, David H. Wells, Patrick Flynn, Whonchee Lee
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Abstract
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.
Claims19
A method of forming at least one single crystal silicon structure, the method comprising:
- forming at least one trench in a surface of a (100) silicon substrate;
- forming a liner material over each of the surface of the (100) silicon substrate and portions of sidewalls of the at least one trench proximate the surface of the (100) silicon substrate;
- and
- anisotropically wet etching exposed surfaces of the at least one trench to undercut the (100) silicon substrate.
1 more element
A semiconductor device structure, comprising:
- a (100) silicon substrate;
- and
- a plurality of (100) silicon structures isolated from the (100) silicon substrate by a spin-on-dielectric material, each of the plurality of (100) silicon structures having an upper surface extending in a <100> direction and sidewalls extending in a <110> direction.
Dependencies are inferred from the claim text.