Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• providing a substrate having a first area with a first poly layer and a second area with a second poly layer;
• forming an oxide hard mask film on the first device in the first area and the second poly layer in the second area;
• depositing a nitride hard mask film above the oxide hard mask film on the first poly layer of a first device in the first area and above the second poly layer in the second area;
• removing the nitride hard mask film in the second area;
• forming a first patterned passivation on the nitride hard mask film in the first area to cover the nitride hard mask film and the first device, and forming a second patterned passivation directly on the oxide hard mask film above the second poly layer in the second area;
• and
• defining the second poly layer in the second area by the second patterned passivation.