Manufacturing method of semiconductor device including peeling layers from substrates by etching

A manufacturing method of a semiconductor device, comprising:

• forming a peeling layer over a substrate having an insulating surface;
• forming a layer to be peeled including a plurality of thin film integrated circuits over the peeling layer;
• forming an opening portion in a portion of the layer to be peeled;
• and
• peeling the layer to be peeled having the opening portion provided over the peeling layer from the substrate by applying a force to the layer to be peeled in an atmosphere of an etching gas that generates a chemical reaction with the peeling layer,
• wherein a nozzle is used to blow the etching gas to the peeling layer and the peeling layer is exposed to the atmosphere of the etching gas prior to blowing the etching gas by the nozzle.

A manufacturing method of a semiconductor device, comprising:

• forming a peeling layer over a substrate having an insulating surface;
• forming a layer to be peeled including a plurality of thin film integrated circuits including a thin film transistor over the peeling layer;
• and
• peeling the layer to be peeled provided over the peeling layer from the substrate by applying a force to the layer to be peeled in an atmosphere of an etching gas that generates a chemical reaction with the peeling layer,
• wherein a nozzle is used to blow the etching gas to the peeling layer and the peeling layer is exposed to the atmosphere of the etching gas prior to blowing the etching gas by the nozzle.