Enhanced capture pads for through semiconductor vias

A method of forming a capture pad on a semiconductor substrate comprising:

• providing a semiconductor substrate having an active side and an inactive side and having a plurality of unfilled through silicon vias (TSVs) extending between the active side and the inactive side;
• filling the TSVs with a metal;
• defining capture pad areas on at least one of the active side and the inactive side adjacent to the TSVs, the defined capture pad areas comprising insulator islands and open areas;
• and
• filling the open areas with the same metal to form a capture pad in direct contact with each of the TSVs, each of the capture pads having a TSV outline portion that follows an outline of each of the TSVs, at least part of each of the TSV outline portions being an all metal portion that follows the outline of each of the TSVs.