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US 9,040,414 B2Granted
Semiconductor devices and methods of manufacturing the same
AssigneeSK hynix Inc.
InventorYoung Jin Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines.
Claims13
A method of manufacturing a semiconductor device, comprising:
- forming contact plugs, each having a top surface having a lower height than a top surface of an etch stop layer, in respective contact holes formed to penetrate a first interlayer insulating layer and the etch stop layer formed on the first interlayer insulating layer;
- forming a second interlayer insulating layer disposed on the etch stop layer and within the contact holes;
- forming line trenches through which the respective contact plugs are exposed by etching the second interlayer insulating layer;
- and
- forming lines, coupled to the contact plugs, in the respective line trenches.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- forming an etch stop layer on a first interlayer insulating layer;
- forming contact holes passing through the etch stop layer and the first interlayer insulating layer;
- forming contact plugs having a height lower than the top surface of the etch stop layer, in the respective contact holes;
- forming a second interlayer insulating layer on the etch stop layer and within the contact holes;
- forming line trenches passing through the second interlayer insulating layer and exposing a portion of the contact plugs and the etch stop layer;
- and
- forming lines coupled to the contact plugs, in the respective line trenches.
4 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a first interlayer insulating layer including contact plugs passing through the first interlayer insulating layer;
- forming an etch stop layer on the first interlayer insulating layer including openings passing through the etch stop layer and exposing the contact plugs;
- forming a second interlayer insulating layer on the etch stop layer and within the openings;
- forming line trenches passing through the second interlayer insulating layer and exposing a portion of the contact plugs and the etch stop layer;
- and
- forming lines coupled to the contact plugs, in the respective line trenches.
3 more elements
Dependencies are inferred from the claim text.