Advanced low k cap film formation process for nano electronic devices
AssigneesInternational Business Machines Corporation, Globalfoundries Inc.
InventorsAlfred Grill, Joshua L. Herman, Son Nguyen, E. Todd Ryan, Hosadurga K. Shobha
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Abstract
A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.
Claims19
A method of forming a dielectric film comprising:
- providing at least a carbon-rich carbosilane precursor into a reactor chamber;
- and
- depositing a dielectric film consisting of atoms of Si, C and H or Si, C, H and nitrogen and having a dielectric constant of less than, or equal to, about 4.5 from the carbon-rich carbosilane precursor onto a surface of a substrate, said dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C.
A method of forming a dielectric film comprising:
- providing at least a carbon-rich carbosilane precursor into a reactor chamber, said carbon rich carbosilane precursor includes a 3:1 or greater ratio of C to Si atoms;
- depositing a dielectric film consisting of atoms of Si, C and H or Si, C, H and nitrogen and having a dielectric constant of less than, or equal to, about 4.5 from the carbon-rich carbosilane precursor onto a Cu surface, said dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C;
- and
- performing a post deposition treatment on said dielectric film, wherein after said post deposition treatment said dielectric film remains compressively stressed.
A method of forming a dielectric film comprising:
- providing at least a carbon-rich carbosilane precursor into a reactor chamber;
- and
- depositing a dielectric film comprising atoms of Si, C, H and nitrogen and having a dielectric constant of less than, or equal to, about 4.5 from the carbon-rich carbosilane precursor onto a surface of a substrate, said dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and said nitrogen is uniformly distributed throughout the dielectric film.
Dependencies are inferred from the claim text.