Methods for fabricating integrated circuits having gate to active and gate to gate interconnects

A method of fabricating an integrated circuit, the method comprising:

• forming a dummy gate structure comprising a dummy gate electrode having sidewalls and overlying a semiconductor substrate and first and second sidewall spacers on the sidewalls of the dummy gate electrode;
• forming a contact on the semiconductor substrate adjacent the first sidewall spacer;
• removing the dummy gate electrode to form a trench bounded by the first and second sidewall spacers;
• removing an upper portion of the first sidewall spacer;
• and
• simultaneously forming a gate electrode and a gate-to-contact interconnect by depositing a layer of metal in the trench, over a remaining portion of the first sidewall spacer, and over the contact.