Fabrication method of silicon carbide semiconductor device
AssigneesFuji Electric Co., Ltd., National Institute of Advanced Industrial Science and Technology
InventorsMasahide Goto, Kenji Fukuda, Noriyuki Iwamuro
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Abstract
A first metal layer (3) is formed on a back face of a silicon carbide substrate (1) to a degree such that the first metal layer (3) does not fully cover the back face of the silicon carbide substrate. Many holes (4) are formed on the back face of the silicon carbide substrate (1) by dry-etching the back face of the silicon carbide substrate (1) using the first metal layer (3) as a mask therefor. A second metal layer constituting an ohmic contact is formed on the first metal layer (3) and the back face of the silicon carbide substrate (1) including inner surfaces of the many holes (4).
Claims10
A silicon carbide semiconductor device fabrication method comprising:
- forming a first metal layer on a back face of a silicon carbide substrate to a degree such that the first metal layer does not fully cover the back face of the silicon carbide substrate;
- forming many holes on the back face of the silicon carbide substrate by dry-etching the back face of the silicon carbide substrate using the first metal layer as a mask therefor;
- and
- forming a second metal layer constituting an ohmic contact, on the first metal layer and the back face of the silicon carbide substrate including inner surfaces of the many holes.
A silicon carbide semiconductor device fabrication method comprising:
- forming a first metal layer on a back face of a silicon carbide substrate such that the first metal layer fully covers the back face of the silicon carbide substrate and thereafter, selectively removing the first metal layer causing a thickness of the first metal layer to be a thickness with which the first metal layer does not fully cover the back face of the silicon carbide substrate;
- forming many holes on the back face of the silicon carbide substrate by dry-etching the back face of the silicon carbide substrate using the first metal layer as a mask therefor;
- and
- forming a second metal layer constituting an ohmic contact, on the first metal layer and the back face of the silicon carbide substrate including inner surfaces of the many holes.
Dependencies are inferred from the claim text.