Method for forming patterned doping regions
AssigneeIndustrial Technology Research Institute
InventorsWen-Ching Sun, Sheng-Min Yu, Tai-Jui Wang, Tzer-Shen Lin
Life of this patent
Estimating the term…
Abstract
A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.
Claims5
A method for forming doping regions, comprising:
- providing a substrate;
- forming a doping material on the substrate;
- forming at least one patterned covering layer on a portion of the surface of the doping material, wherein the portion of the doping material is covered by the at least one patterned covering layer, and another portion of the doping material not covered by the at least one patterned covering layer is exposed;
- and
- performing a thermal diffusion process to diffuse the doping material into the substrate, forming a first doping region in a portion of the substrate underlying the at least one patterned covering layer and forming a second doping region in a portion of the substrate not covered by the at least one patterned covering layer, wherein the doping concentration of the first doping region is greater than the doping concentration of the second doping region.
Dependencies are inferred from the claim text.