Air-stable n-channel organic electronic devices

A method for manufacturing an organic semiconductor device, the method comprising:

• providing an organic semiconductor material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air, the organic semiconductor material having a LUMO level that is at least −4.1 eV;
• selecting an n-type dopant that, when used to dope the organic semiconductor material, effects air stability for the device having doped organic semiconductor material to provide material means for increasing conductivity of the device by the respective organic semiconductor material and the n-type dopant having respective electron affinity and ionization potential values that exhibit an energetic barrier to doping of the organic semiconductor material;
• and
• applying a field to the organic material to generate negative charge carriers in the organic semiconductor material to overcome the energetic barrier and facilitate doping of the organic semiconductor material with the n-type dopant.