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US 9,040,393 B2Granted
Method of forming semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLiang-Gi Yao, Chia-Cheng Chen, Ta-Ming Kuan, Jeff J. Xu, Clement Hsingjen Wann
Life of this patent
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Abstract
A method of forming a semiconductor device includes chemically cleaning a surface of a substrate to form a chemical oxide material on the surface. At least a portion of the chemical oxide material is removed at a removing rate of about 2 nanometer/minute (nm/min) or less. Thereafter, a gate dielectric layer is formed over the surface of the substrate.
Claims17
A method of forming a semiconductor device, the method comprising:
- chemically cleaning a surface of a substrate to form a chemical oxide material on the surface;
- removing at least a portion of the chemical oxide material at a removing rate of about 2 nanometer/minute (nm/min) or less, wherein removing at least a portion of the chemical oxide material comprises:
- rotating the substrate;
- and
- providing a hydrogen fluoride (HF)-containing gas to remove at least a portion of the chemical oxide material;
- and
- forming a gate dielectric layer over the surface of the substrate after the removing the at least a portion of the chemical oxide material.
4 more elements
A method of forming a semiconductor device, the method comprising:
- chemically cleaning a surface of a substrate to form a chemical oxide material on the surface;
- removing at least a portion of the chemical oxide material at a removing rate of about 2 nanometer/minute (nm/min) or less, wherein removing the at least a portion of the chemical oxide comprises exposing the chemical oxide to a mixture of hydrogen fluoride (HF) and isopropyl alcohol (IPA);
- and
- forming a gate dielectric layer over the surface of the substrate after the removing the at least a portion of the chemical oxide material.
1 more element
Dependencies are inferred from the claim text.