Back to results
US 9,040,391 B2Granted
Process for producing localised GeOI structures, obtained by germanium condensation
AssigneeCommissariat a l'Energie Atomique
InventorsJean-François Damlencourt, Benjamin Vincent
Life of this patent
Estimating the term…
Abstract
The invention relates to a process for making at least one GeOI structure by germanium condensation of a SiGe layer supported by a layer of silicon oxide. The layer of silicon oxide is doped with germanium, the concentration of germanium in the layer of silicon oxide being such that it lowers the flow temperature of the layer of silicon oxide below the oxidation temperature allowing germanium condensation of the SiGe layer.
Claims5
A process for making at least one germanium-on-insulator structure, comprising the steps of:
- forming a porous silicon germanium layer (32) on a substrate (31);
- forming a first silicon layer (33) on the porous silicon germanium layer (32);
- forming a layer of silicon germanium (34) intended to be enriched with germanium on the silicon layer (33);
- oxidizing the porous silicon germanium layer (32), thereby forming a layer of silicon oxide (37) doped with germanium;
- performing germanium condensation of the layer of silicon germanium (34) intended to be enriched with germanium, resulting in a layer (38) of silicon germanium enriched with germanium or with a layer of germanium on the layer of silicon oxide (37) doped with germanium.
2 more elements
Dependencies are inferred from the claim text.