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US 9,040,389 B2Granted
Singulation processes
AssigneeInfineon Technologies AG
InventorsGunther Mackh, Maria Heidenblut, Adolf Koller, Anatoly Sotnikov
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Abstract
In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.
Claims29
A method of forming a semiconductor device, the method comprising:
- forming a groove at a first side of a silicon substrate, the groove extending partially into the silicon substrate without extending through the silicon substrate, the silicon substrate comprising doped regions, wherein the silicon substrate comprises active device regions proximate the first side;
- forming a dicing layer from a second side of the silicon substrate, the dicing layer disposed under the groove within the silicon substrate, the second side being opposite the first side, wherein forming the groove comprises using a laser ablation process using light at a wavelength between ultraviolet and infrared, and wherein forming the dicing layer comprises using a stealth laser process using light at a wavelength above 900 nm;
- and
- singulating the silicon substrate through the dicing layer and the groove, wherein the singulating comprises
- attaching the silicon substrate to a tape, and
- forming a crack from the groove through the dicing layer by expanding the tape.
3 more elements
A method of forming a semiconductor device, the method comprising:
- using a first laser process, forming a groove through a metallization layer disposed over a silicon substrate, the groove extending into the silicon substrate and the metallization layer coupled to device regions in the silicon substrate;
- using a second laser process, forming a dicing layer under the groove within the silicon substrate, wherein the second laser process is performed using multi-passing scanning process, and wherein a focal point of a laser beam of the second laser process is adjusted progressively deeper in each subsequent scan step of the multi-passing scanning process, wherein using the first laser process comprises using a laser ablation process using light at a wavelength between ultraviolet and infrared, and wherein using the second laser process comprises using a stealth laser process using light at a wavelength above 900 nm;
- attaching the silicon substrate to a tape;
- and
- performing a tape expansion process on the tape with the silicon substrate, wherein performing the tape expansion process comprises forming a crack from the groove through the dicing layer by expanding the tape.
2 more elements
A method of forming a semiconductor device, the method comprising:
- using a first laser process, forming a groove through a metallization layer disposed over a silicon substrate, the groove extending into the silicon substrate and the metallization layer coupled to device regions in the silicon substrate;
- using a second laser process, forming a dicing layer under the groove within the silicon substrate, wherein the second laser process is performed using multi-passing scanning process, and wherein a focal point of a laser beam of the second laser process is adjusted progressively deeper in each subsequent scan step of the multi-passing scanning process, wherein using the first laser process comprises using a laser ablation process using light at a wavelength between ultraviolet and infrared, and wherein using the second laser process comprises using a stealth laser process using light at a wavelength above 900 nm;
- attaching the silicon substrate to a tape;
- and
- performing a tape expansion process on the tape with the silicon substrate by heating the tape.
2 more elements
Dependencies are inferred from the claim text.