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US 9,040,382 B2Granted
Selective epitaxial growth of semiconductor materials with reduced defects
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJing-Cheng Lin, Chen-Hua Yu
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Abstract
A semiconductor device includes a substrate formed of a first semiconductor material; two insulators on the substrate; and a semiconductor region having a portion between the two insulators and over the substrate. The semiconductor region has a bottom surface contacting the substrate and having sloped sidewalls. The semiconductor region is formed of a second semiconductor material different from the first semiconductor material.
Claims20
A method for forming a device comprising:
- providing a semiconductor layer of a first semiconductor material;
- providing a first insulator layer on the semiconductor layer;
- forming a first opening in the first insulator layer extending from a first side of the first insulator layer through a second side of the first insulator layer to a first side of the semiconductor layer;
- forming a second opening in the semiconductor layer extending from the first opening in the first insulator layer at the first side of the semiconductor layer to a second side of the semiconductor layer, the second opening having a greater width than a width of the first opening;
- and
- forming a semiconductor region in and filling the first opening and the second opening, the semiconductor region comprising a second semiconductor material different from the first semiconductor material.
3 more elements
A method, comprising:
- providing a substrate, the substrate having a first semiconductor layer and a first insulator layer on the first semiconductor layer, the first semiconductor layer comprising a first semiconductor material;
- forming an opening in the first insulator layer and the first semiconductor layer, the opening having a first portion extending through the first insulator layer and a second portion extending through the first semiconductor layer, wherein sidewalls of the second portion of the opening are disposed directly under portions of the first insulator layer;
- filling the second portion of the opening by epitaxially growing a second semiconductor material laterally from the sidewalls of the second portion of the opening;
- and
- filling the first portion of the opening with a third semiconductor material.
2 more elements
A method, comprising:
- forming a first portion of an opening in a first insulator layer;
- forming a second portion of the opening in a semiconductor layer disposed between the first insulator layer and a second insulator layer, wherein the second portion of the opening is wider than the first portion of the opening, and wherein the semiconductor layer is a first semiconductor material;
- and
- growing a second semiconductor material to fill the opening, a first portion of the second semiconductor material disposed in the first portion of the opening and a second portion of the second semiconductor material disposed in the second portion of the opening;
- wherein the first portion of the second semiconductor material has a first material composition and the second portion of the second semiconductor material has a second material composition different than the first material composition.
2 more elements
Dependencies are inferred from the claim text.