Packages with passive devices and methods of forming the same

A method comprising:

• attaching a die over a carrier, wherein the die comprises:
• a semiconductor substrate;
• a metal pad over the semiconductor substrate;
• a passivation layer comprising a portion over the metal pad;
• and
• a metal pillar over the metal pad and extending into the passivation layer;
• molding the die in a polymer, with the polymer encircling the die;
• forming a first dielectric layer over the metal pillar, the passivation layer, and the polymer;
• forming first openings in the first dielectric layer, wherein the metal pillar is exposed through one of the first openings;
• forming a Post-Passivation Interconnect (PPI) line, wherein the PPI line is electrically coupled to the metal pad through the metal pillar and a via in the one of the first openings;
• forming a second dielectric layer comprising a portion over the PPI line;
• forming an Under-Bump Metallurgy (UBM) over and electrically coupled to the PPI line;
• forming a solder region over and connected to the UBM;
• and
• forming a first portion of a passive device, wherein the first portion of a passive device and the UBM are formed simultaneously.

A method comprising:

• molding a die with a polymer, with the polymer encircling the die;
• planarizing the polymer to expose a metal pillar of the die;
• forming a Post-Passivation Interconnect (PPI) line over and electrically coupled to the metal pillar;
• forming an Under-Bump Metallurgy (UBM) over and electrically coupled to the PPI line;
• forming a first portion of a passive device, wherein a first portion of the passive device and the UBM are formed simultaneously in a same process step, and wherein the first portion of the passive device comprises a portion overlapping the polymer;
• and
• forming a solder ball over and in physical contact with the UBM.