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US 9,040,376 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeSK hynix Inc.
InventorsSuk Ki Kim, Kang Sik Choi
Life of this patent
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Abstract
A semiconductor device forms a salicide layer to surround an upper surface and a circumference of a lateral surface of a pillar. A contact area between the pillar and a lower electrode may be increased to reduce a contact resistance.
Claims7
A method for manufacturing a semiconductor device, the method comprising:
- forming a plurality of pillars by etching a semiconductor substrate using a hard mask pattern;
- gap-filling a conductive material between the pillars, and etching back the conductive material so that an upper surface of the etching backed conductive material has a height lower than that of an upper surface of each of the pillars;
- forming a first spacer on a lateral surface of the hard mask pattern and on an upper portion of a lateral surface of each of pillars, which is uncovered with the etching backed conductive material, the first spacer formed of the same material as that of the hard mask pattern;
- removing the hard mask pattern and an upper portion of the first spacer to expose the upper surface of each of the pillars and a portion of the upper portion of the lateral surface of each of the pillars;
- forming a salicide layer to surround the exposed upper surface of each of the pillars and the exposed portion of the upper portion of the lateral surface of each of the pillars;
- and
- forming a lower electrode to surround the salicide layer.
4 more elements
Dependencies are inferred from the claim text.