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US 9,040,374 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorDong Kee Lee
Life of this patent
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Abstract
Disclosed is a semiconductor device having a substrate including first and second regions. First interlayer insulation layers and conductive patterns alternately are stacked on a first region of the substrate. A second interlayer insulation layer covers the first interlayer insulation layers and the conductive patterns. A resistor is formed in the second interlayer insulation layer in the second region of the substrate.
Claims9
A semiconductor device, comprising:
- a substrate including first and second regions;
- first interlayer insulation layers and conductive patterns alternately stacked in the first region of the substrate;
- a through hole passing through the first interlayer insulation layers and the conductive patterns;
- a channel layer formed in the through hole;
- a second interlayer insulation layer covering the first interlayer insulation layers and the conductive patterns;
- and
- a resistor formed in the second interlayer insulation layer in the second region of the substrate.
4 more elements
A semiconductor device, comprising:
- a substrate including first and second regions;
- first interlayer insulation layers and conductive patterns alternately stacked in the first region of the substrate;
- a through hole passing through the first interlayer insulation layers and the conductive patterns;
- a channel layer formed in the through hole;
- a second interlayer insulation layer covering the first interlayer insulation layers and the conductive patterns;
- and
- a resistor formed in the second interlayer insulation layer in the second region of the substrate,
- wherein edges of the conductive patterns and edges of the first interlayer insulation layers extend from the first region to the second region so that a stepwise structure is formed in the second region of the substrate.
5 more elements
Dependencies are inferred from the claim text.