Loading patent…
AssigneeL'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges
InventorsNicolas Blasco, Antony Correia-Anacleto, Audrey Pinchart, Andreas Zauner
Estimating the term…
Disclosed are methods for forming a metal-containing layer on a substrate. The methods include providing a vapor and at least one reaction gas and reacting the vapor and the reaction gas with the substrate by a deposition process. The vapor may be selected from the group consisting of (Cp)V(═NtBu)(NEt2)2; (Cp)V(═NtBu)(NMe2)2; (Cp)V(═NtBu)(NEtMe)2; (Cp)V(═NiPr)(NEt2)2; (Cp)V(═NiPr)(NMe2)2; (Cp)V(═NiPr)(NEtMe)2; (Cp)V(═NC5H11)(NEt2)2; (Cp)V(═NC5H11)(NMe2)2; (Cp)V(═NC5H11)(NEtMe)2; (Cp)Nb(═NtBu)(NEt2)2; (Cp)Nb(═NtBu)(NMe2)2; (Cp)Nb(═NtBu)(NEtMe)2; (Cp)Nb(═NiPr)(NEt2)2; (Cp)Nb(═NiPr)(NMe2)2; (Cp)Nb(═NiPr)(NEtMe)2; (Cp)Nb(═NC5H11)(NEt2)2; (Cp)Nb(═NC5H11)(NMe2)2; and (Cp)Nb(═NC5H11)(NEtMe)2. The reaction gas may be selected from the group consisting of hydrogen, hydrogen sulfide, hydrogen selenide, hydrogen telluride, carbon monoxide, ammonia, organic amine, silane, disilane, higher silanes, silylamines, diborane, hydrazine, methylhydrazine, chlorosilane, chloropolysilane, metal alkyl, arsine, phosphine, trialkylboron, oxygen, hydrogen peroxide, nitrous oxide, nitrogen monoxide, nitrogen dioxide, alcohols, plasma comprising fragments of those species, and combinations thereof.
A method for forming a metal-containing layer on a substrate, the method comprising the steps of:
A method of manufacturing a semiconductor structure, comprising the steps of:
A compound selected from the group consisting of:
Dependencies are inferred from the claim text.