Method for fabricating thin film transistor array substrate

A method of fabricating a thin film transistor array substrate, the method comprising:

• preparing a substrate defined into a display area and a non-display area;
• forming a gate electrode and a gate line, which are disposed in the display area, and a gate pad and a data pad, which are disposed in the non-display area, by forming a metal film on the substrate and performing a first mask procedure for the metal film;
• forming source/drain electrodes and a data line by forming a gate insulation film, a semiconductor layer and a source/drain metal film on the substrate provided with the gate electrode and performing form the semiconductor layer and the source/drain metal film a second mask procedure which uses one of a first half-tone and a first diffractive mask;
• sequentially forming a first passivation layer, a photo acryl layer and a first transparent metal layer on the substrate provided with the source/drain electrodes;
• forming a common electrode, which is disposed in the pixel region, and first through third contact holes, which are positioned in regions of the drain electrode, the gate pad and the data pad, respectively, using one of a half-tone mask and a diffractive mask;
• forming a second passivation layer on the substrate provided with the first through third contact holes;
• exposing the drain electrode, the gate pad and the data pad by removing the first and second passivation layers from the drain electrode region, the gate pad region and data pad region;
• and
• forming a pixel electrode on the second passivation layer opposite to the common electrode by forming a second transparent metal layer on the substrate and performing a third mask procedure for the second transparent metal layer.