FinFET with reduced capacitance

A method comprising:

• providing fins etched from a semiconductor substrate and conformally covered by a dummy gate oxide;
• depositing a gap fill material directly on top of the dummy gate oxide and in between the fins such that a portion of the dummy gate oxide immediately above the fins remains exposed;
• depositing a dummy gate directly on top of the dummy gate oxide and directly on top of the gap fill material;
• patterning the dummy gate, the gap fill material, and the dummy gate oxide into dummy gate lines oriented perpendicular to the fins, a portion of the fins not covered by the dummy gate lines are exposed, and a portion of the gap fill material remains covered by the dummy gate;
• forming spacers directly on opposite sidewalls of the dummy gate lines, including on the sidewalls of the dummy gate, the sidewalls of the gap fill material and sidewalls of the dummy gate oxide;
• removing the dummy gate from between the spacers exposing the dummy gate oxide and the gap fill material;
• forming one or more openings between the fins and the gap fill material by selectively removing a portion of the dummy gate oxide, another portion of the dummy gate oxide remaining directly beneath the gap fill material;
• and
• forming a gate within the one or more openings, the gate is in direct contact with both the fins and the gap fill material.

A method comprising:

• providing fins etched from a semiconductor substrate and conformally covered by a dummy gate oxide;
• depositing a gap fill material directly on top of the dummy gate oxide and in between the fins such that a portion of the dummy gate oxide immediately above the fins remains exposed;
• depositing a dummy gate directly on top of the dummy gate oxide and directly on top of the gap fill material;
• patterning the dummy gate into dummy gate lines oriented perpendicular to the fins, the dummy gate is patterned selective to the gap fill material and the dummy gate oxide;
• forming spacers directly on opposite sidewalls of the dummy gate lines, including sidewalls of the dummy gate and excluding sidewalls of the gap fill material and sidewalls of the dummy gate oxide;
• forming a first opening in a source drain region by selectively removing a portion of the dummy gate oxide remaining uncovered by the dummy gate lines, the first opening is between the fins and the gap fill material in the source drain region;
• removing the dummy gate from between the spacers exposing the dummy gate oxide and the gap fill material in a gate region;
• forming a second opening in the gate region by selectively removing another portion of the dummy gate oxide uncovered by the dummy gate lines, the second opening is between the fins and the gap fill material in the gate region;
• and
• forming a gate within the second opening, the gate is in direct contact with both the fins and the gap fill material in the gate region.