Method for manufacturing semiconductor light emitting device
AssigneeToyoda Gosei Co., Ltd.
InventorsTakayoshi Yajima, Hiroshi Ito
Life of this patent
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Abstract
A method for manufacturing a semiconductor light emitting device comprises a sealing step of sealing a semiconductor chip fixed on a lead frame with a sealing member, a removal step of removing the sealing member until a surface of the semiconductor chip becomes exposed, an irregularity formation step of forming fine irregularities on a bond surface formed in the removal step, and a bonding step of bonding a wavelength conversion member to the bond surface.
Claims9
A method for manufacturing a semiconductor light emitting device, the method comprising:
- sealing a semiconductor chip fixed on a lead frame with a sealing member;
- removing the sealing member until a surface of the semiconductor chip becomes exposed;
- forming fine irregularities on a bond surface formed in the removing;
- and
- bonding a wavelength conversion member to the bond surface,
- wherein the bond surface is ground in a plurality of directions in the forming fine irregularities.
A method for manufacturing a semiconductor light emitting device, the method comprising:
- sealing a semiconductor chip fixed on a lead frame with a sealing member;
- removing the sealing member until a surface of the semiconductor chip becomes exposed;
- forming fine irregularities on a bond surface formed in the removing;
- and
- bonding a wavelength conversion member to the bond surface,
- wherein the fine irregularities are formed so as to conform to a wavelength of light emanating from the semiconductor chip.
A method for manufacturing a semiconductor light emitting device, the method comprising:
- sealing a semiconductor chip fixed on a lead frame with a sealing member;
- removing the sealing member until a surface of the semiconductor chip becomes exposed;
- forming fine irregularities on a bond surface formed in the removing;
- and
- bonding a wavelength conversion member to the bond surface,
- wherein the removing comprises grinding the sealing member so as to expose a height of the semiconductor chip between 1 to 50 microns.
A method for manufacturing a semiconductor light emitting device, the method comprising:
- sealing a semiconductor chip fixed on a lead frame with a sealing member;
- removing the sealing member until a surface of the semiconductor chip becomes exposed;
- forming fine irregularities on a bond surface formed in the removing;
- and
- bonding a wavelength conversion member to the bond surface,
- wherein the bond surface includes an upper end bond surface of the sealing member and an upper end bond surface of the semiconductor chip.
A method for manufacturing a semiconductor light emitting device, the method comprising:
- sealing a semiconductor chip fixed on a lead frame with a sealing member;
- removing the sealing member until a surface of the semiconductor chip becomes exposed;
- forming fine irregularities on a bond surface formed in the removing;
- and
- bonding a wavelength conversion member to the bond surface,
- wherein the fine irregularities are formed such that light transmitted towards an inside of the semiconductor chip is blocked.
Dependencies are inferred from the claim text.