Method and system for a semiconductor device package with a die to interposer wafer first bond

A method for semiconductor packaging, the method comprising:

• applying an underfill material to a front side of an interposer;
• forming wells in the underfill material on the interposer;
• bonding a first semiconductor die to the front side of the interposer by, at least in part, aligning micro-bumps on the semiconductor die with the wells formed in the underfill material;
• applying a mold material to encapsulate said first semiconductor die;
• thinning said interposer to expose through-silicon-vias (TSVs);
• and
• applying metal contacts to said exposed TSVs.

A method for semiconductor packaging, the method comprising:

• applying an underfill material on an interposer wafer;
• forming wells only partially through the underfill material on the interposer wafer;
• positioning a plurality of semiconductor die in relation to said interposer wafer utilizing a temporary adhesive film that is bonded to a first surface of the plurality of semiconductor die opposite a second surface of the plurality of semiconductor die, said second surface comprising micro-bumps;
• bonding said plurality of semiconductor die comprising electronic devices to a front side of said interposer wafer by, at least in part, aligning the micro-bumps with the well;
• applying a mold material to encapsulate said plurality of semiconductor die;
• applying metal contacts to through silicon vias (TSVs) exposed in said interposer wafer;
• singulating said interposer wafer to generate a plurality of assemblies each comprising one or more of said plurality of semiconductor die and an interposer die;
• and
• bonding one or more of said plurality of assemblies to one or more packaging substrates.