Semiconductor package and methods of formation thereof

A method of forming a semiconductor package, the method comprising:

• placing a plurality of power semiconductor chips over a carrier, each of the plurality of power semiconductor chips having a source contact region and a gate contact region on a first side and an opposite second side, each of the plurality of power semiconductor chips having an active region adjacent the first side, wherein the plurality of power semiconductor chips comprise chips configured to regulate vertical current flow in a direction from the first side towards the second side;
• forming a reconstituted wafer by applying an encapsulant over the plurality of power semiconductor chips and the carrier;
• forming a through opening in the encapsulant;
• forming a first contact opening in the encapsulant over the source contact region and a second contact opening in the encapsulant over the gate contact region;
• forming a first contact via by filling the through opening with a conductive fill material from the first side, wherein an upper portion of the first contact via forms a contact pad;
• forming a second contact via and a third contact via by filling the first and the second contact openings with the conductive fill material;
• thinning the first contact via and the plurality of power semiconductor chips by grinding the reconstituted wafer;
• and
• after the thinning, forming a second side conductive plate under a drain contact region from the second side, wherein the drain contact region is coupled to the first contact via through the second side conductive plate wherein the second side conductive plate is formed from the second side opposite to the first side used to fill the through opening with the conductive fill material.