A method for fabricating an array substrate, comprising forming a thin film transistor, a first transparent electrode and a second transparent electrode, wherein a multi dimensional electric field is created by the first transparent electrode and the second transparent electrode, wherein, forming the first transparent electrode comprises:
- forming a metal oxide film presenting semiconductor properties;
- forming the first transparent electrode by subjecting a portion of the metal oxide film to metallization treatment, and forming a semiconductor active layer from a portion which is not subjected to the metallization treatment,
- wherein forming the thin film transistor, the first transparent electrode and the second transparent electrode comprises:
- sequentially forming the metal oxide film and an etching barrier layer film on the substrate having a gate line, a gate electrode and a gate insulating layer formed thereon;
- forming an etching barrier layer covering a TFT channel region by treating the etching barrier layer film with patterning process;
- subjecting the metal oxide film not covered by the etching barrier layer to metallization treatment, to form a metal oxide film having conductor properties;
- forming the semiconductor active layer from the portion of the metal oxide film that is covered by the etching barrier layer and is not subjected to the metallization treatment;
- after the metallization treatment, forming the first transparent electrode and a source connecting electrode, a drain connecting electrode connected to the semiconductor active layer by etching the metal oxide film having conductor properties with a photoresist pattern thereon as a mask;
- forming a source electrode, a drain electrode, a data line, a passivation layer and the second transparent electrode on the substrate having the semiconductor active layer, the etching barrier layer and the first transparent electrode formed thereon, wherein the source electrode is electrically connected to the source connecting electrode, and the drain electrode is electrically connected to the drain connecting electrode,
- wherein,
- the method further comprises forming the gate line, the gate electrode and a common electrode line on the substrate and forming a gate insulating layer on the substrate, the gate line, the gate electrode and the common electrode line, prior to sequentially forming the metal oxide film and the etching barrier layer film on the substrate having the gate line, the gate electrode and the gate insulating layer formed thereon;
- forming the source electrode, the drain electrode, the data line, the passivation layer and the second transparent electrode on the substrate having the semiconductor active layer, the etching barrier layer and the first transparent electrode formed thereon comprises:
- forming the data line, the source electrode, and the drain electrode electrically connected to the first transparent electrode on the substrate having the semiconductor active layer, the etching barrier layer and the first transparent electrode formed thereon, forming the passivation layer containing a first through hole, the first through hole passing through the passivation layer and the gate insulating layer so as to expose the common electrode line;
- and forming the second transparent electrode on the passivation layer, the second transparent electrode being electrically connected to the common electrode line via the first through hole.