Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

A method of manufacturing a solid-state imaging device, comprising:

• forming a gate insulating film lined hole with a desired depth extending from a front surface side of a substrate toward a rear surface side of the substrate;
• forming a vertical gate electrode that causes a reading-out portion formed at a surface side of the substrate to read out the signal charges accumulated in a photoelectric conversion unit by embedding an electrode material into the gate insulating film lined hole;
• forming a wire layer where a plurality of layers of wires are stacked, on the front surface side of the substrate in an interlayer insulating film;
• turning over the substrate after bonding a support substrate onto the wire layer;
• removing the gate insulating film formed in the through-hole to a predetermined depth and reducing the thickness of the substrate until the hole extends to the rear surface side of the substrate;
• and
• forming a charge fixing film having negative fixed charges covering the entire rear surface of the substrate and filling the through-hole where the gate insulating film was removed with the charge fixing claim.