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US 9,040,340 B2Granted
Temperature grading for band gap engineering of photovoltaic devices
AssigneeInternational Business Machines Corporation
InventorsAhmed Abou-Kandil, Keith E. Fogel, Augustin J. Hong, Jeehwan Kim, Mohamed Saad, Devendra K. Sadana
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Abstract
A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.
Claims24
A method for fabricating a photovoltaic device, comprising:
- depositing a p-type layer at a first temperature;
- depositing an intrinsic layer directly on the p-type layer while continuously increasing a deposition temperature to a final temperature, including forming a band gap alignment region at an interface between the p-type layer and the intrinsic layer such that band gap energy includes a continuous transition;
- completing the intrinsic layer at the final temperature;
- and
- forming an n-type layer directly on the intrinsic layer.
2 more elements
A method for fabricating a photovoltaic device, comprising:
- providing an electrode;
- depositing a p-type layer at a first temperature on the electrode;
- isolating a dopant source to complete the p-type layer;
- forming an intrinsic layer directly on the p-type layer while continuously increasing a deposition temperature;
- continuing to continuously increase the deposition temperature to a final temperature to complete the intrinsic layer wherein a difference between the first temperature and the final temperature is between about 50 to about 80 degrees Celsius;
- and
- forming an n-type layer directly on the intrinsic layer.
4 more elements
A method for fabricating a photovoltaic device, comprising:
- depositing a p-type layer at a first temperature;
- depositing an intrinsic layer directly on the p-type layer while continuously and linearly increasing a deposition temperature to a final temperature;
- completing the intrinsic layer at the final temperature;
- and
- forming an n-type layer directly on the intrinsic layer.
2 more elements
Dependencies are inferred from the claim text.