Light emitting diode and manufacturing method thereof

A manufacturing method for a light emitting diode (LED), comprising following steps:

• providing an LED wafer, wherein an electrically conductive layer is disposed on the LED wafer, and the LED wafer comprises a substrate and an epitaxial layer on the substrate, the electrically conductive layer being located on the epitaxial layer;
• providing a photoresist layer on the electrically conductive layer;
• roughening a lateral surface of the electrically conductive layer by wet etching;
• forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression, the depression being recessed in the epitaxial layer without reaching the substrate;
• and
• disposing two pads respectively in the depression and on the electrically conducting layer to electrically connect with different layers of the epitaxial layer;
• wherein the roughened sidewall of the LED wafer by the dry etching process is flush with the roughened lateral surface of the electrically conductive layer by the wet etching process.