Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes

A method of fabricating an optoelectronic device, comprising:

• creating a nonpolar or semipolar Group III nitride semiconductor light emitting device having an active region comprised of one or more nonpolar or semipolar Group III nitride quantum wells, and no Al-containing waveguide cladding layers, wherein the quantum wells effectively confine an optical mode to the active region, such that the quantum wells function as an optical waveguide layer for the light emitting device.