Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp

A method of manufacturing a group-III nitride compound semiconductor light-emitting device, comprising steps of:

• forming an intermediate layer made of a group-III nitride compound on a substrate by activating and reacting gas including a group-V element with a metal material in plasma;
• and
• sequentially forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer each made of a group-III nitride compound semiconductor on the intermediate layer,
• wherein nitrogen is used as the group-V element,
• the thickness of the intermediate layer is in the range of 20 to 80 nm,
• the intermediate layer is formed by a sputtering method,
• an underlying layer included in the n-type semiconductor is formed on the intermediate layer,
• the underlying layer is formed of a GaN-based compound semiconductor, and
• the intermediate layer has high crystallinity wherein a half width of an XRC spectrum of the (0002) plane of an undoped GaN layer is less than 150 arcsec, and a half width of an XRC spectrum of the (10-10) plane is less than 350 arcsec.