Method for producing ferroelectric thin film
AssigneeMitsubishi Materials Corporation
InventorsShintaro Iida, Hideaki Sakurai
Life of this patent
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Abstract
It is possible to produce a ferroelectric thin film controlled to have the preferential crystal orientation in the (100) plane with a simple process without providing a seed layer or a buffer layer. A ferroelectric thin film is produced on a lower electrode by irradiating a surface of the lower electrode of a substrate having the lower electrode where the crystal plane is oriented in a (111) axis direction, with an atmospheric pressure plasma, coating a composition for forming a ferroelectric thin film on the lower electrode, and heating and crystallizing the coated composition.
Claims5
A method for producing a ferroelectric film on a lower electrode by coating a composition for forming a ferroelectric film on the lower electrode of a substrate having the lower electrode where a crystal plane is oriented in the (111) axis direction, calcining the coated composition, and then firing and crystallizing the coated composition, the method comprising:
- irradiating a surface of the lower electrode with an atmospheric pressure plasma before coating the composition for forming a ferroelectric film;
- and
- coating, calcining and firing the composition for forming a ferroelectric film on the lower electrode to form the ferroelectric film controlled to have a preferential crystal orientation in the (100) plane,
- wherein an introduction gas when the lower electrode is irradiated with the atmospheric pressure plasma is O2 or N2, or a mixture thereof;
- and
- wherein the composition is an organic metal compound solution that a raw material for a metal composite oxide is dissolved in an organic solvent.
Dependencies are inferred from the claim text.