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AssigneeNippon Electric Glass Co., Ltd.
InventorsYoshio Umayahara, Ryota Suzuki, Yoshikatsu Nishikawa, Masaru Ikebe, Hiroki Mori, Yoshinori Hasegawa
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A dopant host containing, in terms of mole %, 20 to 50% SiO2, 30 to 60% (exclusive of 30%) Al2O3, 10 to 40% B2O3, and 2 to 10% RO, wherein R represents alkaline earth metal, or being a laminate including a boron component volatilization layer containing, in terms of mole %, 30 to 60% SiO2, 10 to 30% Al2O3, 15 to 50% B2O3, and 2 to 10% RO, wherein R represents alkaline earth metal, and a heat resistant layer containing, in terms of mole %, 8 to 30% SiO2, 50 to 85% Al2O3, 5 to 20% B2O3, and 0.5 to 7% RO, wherein R represents alkaline earth metal. A process for producing a boron dopant for a semiconductor including the steps of slurrying a starting material powder containing a boron-containing crystalline glass powder, forming the slurry to prepare a green sheet, and sintering the green sheet.
A dopant host characterized in that it comprises a laminate including a boron component vaporization layer having a composition comprising 30-60% by mole of SiO2, 10-30% by mole of Al2O3, 15-50% by mole of B2O3 and 2-10% by mole of RO, wherein R denotes an alkaline earth metal, and a heat resistant layer having a composition comprising 8-30% by mole of SiO2, 50-85% by mole of Al2O3, 5-20% by mole of B2O3 and 0.5-7% by mole of RO, wherein R denotes an alkaline earth metal.
Dependencies are inferred from the claim text.