Low temperature silicon carbide deposition process
AssigneeApplied Materials, Inc.
InventorDavid Thompson
Life of this patent
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Abstract
Methods for formation of silicon carbide on substrate are provided. Atomic layer deposition methods of forming silicon carbide are described in which a first reactant gas of the formula SinHaXb wherein n=1-5, a+b=2n+2, a>0, and X=F, Cl, Br, I; and a second reactant gas of the formula MR3-bYb, wherein R is a hydrocarbon containing substituent, Y is a halide, hydride or other ligand and b=1-3 are sequentially deposited on a substrate and then exposed to a plasma. The process can be repeated multiple times to deposit a plurality of silicon carbide layers.
Claims20
A method for forming a silicon carbide material on a substrate surface comprising:
- exposing a substrate sequentially to a first reactant gas of the formula SinHaXb wherein n=1-5, a+b=2n+2, a>0 and X=F, Cl, Br, I;
- and second reactant gas of the formula MR3-bYb, wherein M is an element selected from Group III or Group IIIb of the period table, R is a hydrocarbon containing substituent, Y is a halide, hydride or other ligand and b=1-3, to form a silicon carbide layer containing excess hydrogen on the substrate during an atomic layer deposition process;
- exposing the substrate having the silicon carbide layer to a treatment process to remove at least some of the excess hydrogen;
- and
- repeating sequentially the atomic layer deposition process and the treatment process.
A method for forming a silicon carbide material on a substrate surface, comprising:
- exposing a substrate sequentially to a silicon tetrachloride reactant gas and a trimethylaluminum (TMA) reactant gas to form a silicon carbide layer on the substrate during an atomic layer deposition process;
- exposing the silicon carbide layer to at least one of a heat treatment and a plasma during a treatment process;
- and
- repeating sequentially the atomic layer deposition process and the treatment.
A method of forming a silicon carbide material on a substrate surface, comprising:
- (a) disposing a substrate within a process chamber;
- (b) flowing silicon tetrachloride gas to substrate within the chamber under conditions which form a monolayer on the substrate, the monolayer comprising silicon terminated with chlorine;
- (c) purging the process chamber;
- (d) flowing trimethylaluminum (TMA) gas to the substrate under conditions in which methyl groups exchange with chlorine and to provide a hydrogen rich layer;
- (e) purging the process chamber;
- (f) exposing the substrate to at least one of a heat treatment and a plasma treatment to reduce hydrogen in the hydrogen rich layer;
- (g) purging the process chamber;
- and
- (h) repeating steps (b) through (g).
Dependencies are inferred from the claim text.