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US 9,040,123 B2Granted
Pattern formation method
AssigneeKabushiki Kaisha Toshiba
InventorsAyako Kawanishi, Tsukasa Azuma
Life of this patent
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Abstract
According to the embodiments, a pattern formation method includes a process of formation of a self-assembly material layer containing at least a first segment and a second segment on a substrate having a guide layer, a process of formation of a neutralization coating on the self-assembly material layer, and a process of formation of a self-assembly pattern including a first region containing the first segment and a second region containing the second segment following phase separation of the self-assembly material layer.
Claims12
A pattern formation method, comprising:
- forming a guide layer on a substrate;
- forming a self-assembly material layer containing at least a first segment and a second segment on the guide layer;
- forming a neutralization coating on an upper surface of the self-assembly material layer by exposing the upper surface of the self-assembly material layer to a poor solvent for the self-assembly material layer;
- and
- forming a self-assembled pattern containing a first region comprising the first segment and a second region comprising the second segment after phase separation of the self-assembly material layer.
2 more elements
A pattern formation method, comprising
- forming a self-assembly material layer containing at least a first segment and a second segment on a substrate having a guide layer;
- forming a neutralization coating on an upper surface of the self-assembly material layer by exposing the upper surface of the self-assembly material layer to a poor solvent for the self-assembly material layer;
- and
- forming a pattern on the self-assembly material layer, the pattern comprising a first region including the first segment and a second region including the second segment when the self-assembly material layer is phase separated.
1 more element
Dependencies are inferred from the claim text.