Solution-processed organic electronic structural element with improved electrode layer
AssigneeOSRAM Opto Semiconductors GmbH
InventorsAndreas Kanitz, Ralph Pätzold, Wiebke Sarfert, Riikka Suhonen
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Abstract
A solution-processed organic electronic structural element has an improved electrode layer. Located between the active organic layer and the electrode layer there is either an interface or an interlayer containing a cesium salt.
Claims11
A method of producing a solution-processed organic electronic structural element comprising a substrate, at least two single-layer or multilayer electrodes, between them at least one active organic semiconductive layer, comprising:
- depositing an n-dopant of a cesium salt in the form of a solution, thereby producing an intermediate layer or an interface between an electrode layer and an active organic semiconductive layer, wherein the intermediate layer or the interface has a thickness of less than 15 nm, wherein the cesium salt is at least one compound selected from the group of structure types consisting of:
- alkane sulfonic acids:
- disulfonic acids:
- polymer-bound carboxylic acids:
- and polymer-bound sulfonic acids
- wherein R stands for alkyl (C1-C20 branched, or unsaturated and/or hydroxy-substituted), phenyl (alkylated and/or hydroxy- and/or alkoxy-substituted) and/or pyridyl,
- wherein R1 stands for alkylene (C2-C20 normal, branched, saturated or unsaturated and hydroxy-substituted), 1,2-phenylene, 1,3-phenylene 1,4-phenylene or 2,6-pyridylen, and
- wherein n and m stand for any natural numbers.
A method of producing a solution-processed organic electronic structural element comprising a substrate, at least two single-layer or multilayer electrodes, between them at least one active organic semiconductive layer, comprising:
- depositing an n-dopant of a cesium salt in the form of a solution, thereby producing an intermediate layer and an interface between an electrode layer and an active organic semiconductive layer, wherein the intermediate layer and interface has a thickness of less than 15 nm, wherein the cesium salt is at least one compound selected from the group of structure types consisting of:
- alkane sulfonic acids:
- disulfonic acids:
- polymer-bound carboxylic acids:
- and polymer-bound sulfonic acids
- wherein R stands for alkyl (C1-C20 branched, or unsaturated and/or hydroxy-substituted), phenyl (alkylated and/or hydroxy- and/or alkoxy-substituted) and/or pyridyl,
- wherein R1 stands for alkylene (C2-C20 normal, branched, saturated or unsaturated and hydroxy-substituted), 1,2-phenylene, 1,3-phenylene 1,4-phenylene or 2,6-pyridylen, and
- wherein n and m stand for any natural numbers.
Dependencies are inferred from the claim text.