Back to results
US 9,039,944 B2Granted
Sputtering target
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuaki Ebata, Shigekazu Tomai, Kota Terai, Shigeo Matsuzaki, Koki Yano
Life of this patent
Estimating the term…
Abstract
A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.
Claims14
A sputtering target comprising a sintered body comprising In, Ga and Mg,
- the sintered body comprising a compound redresented by In2O3,
- the sintered body comprising one or more compounds selected from a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and
- having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.
Dependencies are inferred from the claim text.