Freestanding films with electric field-enhanced piezoelectric coefficients
AssigneeDrexel University
InventorsWei-Heng Shih, Hongyu Luo, Christian Martorano, Wan Y. Shih
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AssigneeDrexel University
InventorsWei-Heng Shih, Hongyu Luo, Christian Martorano, Wan Y. Shih
Estimating the term…
A method to produce low-temperature sinterable powders which are then subsequently used to fabricate freestanding piezoelectric films with very large electric-field-enhanced piezoelectric response is provided. The −d31 coefficient for PMN-PT layers can be as high as 2000 pm/V, larger than that of commercial single crystalline PMN-PT bulk materials, at 10 kV/cm (or 20 V over the 20-micron film thickness). In contrast to single crystals, the polycrystalline freestanding films are easy to fabricate and can be made into any size. The films are also easily miniaturized. The method can be applied to nearly any piezoelectric material.
A polycrystalline ceramic freestanding film having −d31 of from 1500 pm/V to 2000 pm/V at either 9 or 10 kV/cm, wherein the film has a thickness of a few grains up to 50 μm and said polycrystalline ceramic is either PMN-PT or PZN-PT.
A polycrystalline ceramic freestanding film having −d31 of from 1500 pm/V to 2000 pm/V at either 9 or 10 kV/cm, wherein the film has a thickness of from 22 um to 50 μm and said polycrystalline ceramic is either PMN-PT or PZN-PT.
Dependencies are inferred from the claim text.