Method of manufacturing semiconductor device and substrate processing apparatus

A substrate processing apparatus comprising:

• a process vessel configured to accommodate a substrate;
• a heater configured to heat a substrate in the process vessel;
• a source gas supply system configured to supply a source gas containing a predetermined element into the process vessel;
• an oxygen-containing gas supply system configured to supply an oxygen-containing gas into the process vessel;
• a hydrogen-containing gas supply system configured to supply a hydrogen-containing gas into the process vessel;
• a pressure regulator configured to control a pressure of an inside of the process vessel;
• and
• a controller configured to control the heater, the source gas supply system, the oxygen-containing gas supply system, the hydrogen-containing gas supply system, and the pressure regulator so as to perform:
• (a) forming an oxide film on the substrate by alternately repeating:
• (a-1) supplying the source gas into the process vessel accommodating the substrate to form a layer containing the predetermined element;
• and (a-2) supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel to change the layer containing the predetermined element into an oxide layer, the inside of the process vessel being under a heated atmosphere having a pressure lower than an atmospheric pressure;
• and after that, (b) supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the pressure lower than the atmospheric pressure.

A substrate processing apparatus comprising:

• a process vessel configured to accommodate a substrate;
• a heater configured to heat a substrate in the process vessel;
• a source gas supply system configured to supply a source gas containing a predetermined element into the process vessel;
• an oxygen-containing gas supply system configured to supply an oxygen-containing gas into the process vessel;
• a hydrogen-containing gas supply system configured to supply a hydrogen-containing gas into the process vessel;
• a pressure regulator configured to control a pressure of an inside of the process vessel;
• and
• a controller configured to control the heater, the source gas supply system, the oxygen-containing gas supply system, the hydrogen-containing gas supply system, and the pressure regulator so as to perform:
• alternately repeating:
• (a-1) supplying the source gas into the process vessel accommodating the substrate;
• and (a-2) supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a pressure lower than an atmospheric pressure;
• and after that, (b) supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the pressure lower than the atmospheric pressure.