Creating extremely thin semiconductor-on-insulator (ETSOI) having substantially uniform thickness

A method comprising:

• measuring a semiconductor layer thickness at a plurality of selected points on a wafer;
• determining a removal thickness to be removed at each of the plurality of selected points, wherein the removal thickness is different for each of the plurality of selected points and comprises the amount required to be removed at each selected point in order to result in a substantially uniform within-wafer semiconductor layer thickness;
• implanting a species into the wafer at each of the plurality of selected points with a different dose level and a different energy level for each of the plurality of selected points based on the removal thickness for each of the plurality of selected points;
• and
• polishing the semiconductor layer to thin the semiconductor layer, wherein the implanting results in a different polishing rate for each of the plurality of selected points resulting in a substantially uniform thickness of the semiconductor layer.