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US 9,006,931 B2Granted
Static-electrical-field-enhanced semiconductor-based devices and methods of enhancing semiconductor-based device performance
AssigneeVersatilis LLC
InventorAjaykumar R. Jain
Life of this patent
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Abstract
Devices that include one or more functional semiconductor elements that are immersed in static electric fields (E-fields). In one embodiment, one or more electrets are placed proximate the one or more organic, inorganic, or hybrid semiconductor elements so that the static charge(s) of the electret(s) participate in creating the static E-field(s) that influences the semiconductor element(s). An externally applied electric field can be used, for example, to enhance charge-carrier mobility in the semiconductor element and/or to vary the width of the depletion region in the semiconductor material.
Claims39
A device, comprising:
- a functional semiconductor element providing, during use, at least one of 1) an electrical function and 2) an opto electrical function;
- and
- a static-field source that produces a static electric field and includes at least one electret, said static-field source designed, configured and located in fixed relation relative to said functional semiconductor element so that said static electric field enhances carrier mobility within said functional semiconductor element;
- wherein said functional semiconductor element has a first side and a second side spaced from said first side said static-field source including a mono-polar electret located on said first side and a grounded body located on said second side.
1 more element
A device, comprising:
- a functional semiconductor element that includes a donor material, an acceptor material, and a carrier-depletion region formed within said donor and acceptor materials and having a width, said functional semiconductor element providing, during use, at least one of 1) an electrical function and 2) an optoelectrical function;
- and
- a static-field source that produces a static electric field, said electric field source located in fixed relation relative to said functional semiconductor element so as to control said width of said depletion region;
- wherein said functional semiconductor element second side spaced from said first side, said static-field source including a mono-polar electret located on said first side and a grounded body located on said second side.
1 more element
A photovoltaic-cell device, comprising:
- a photovoltaic cell that includes:
- a semiconductor body containing donor and acceptor materials and having a first side and a second side spaced from said first side;
- a first ohmic contact in electrical communication with said semiconductor body on said first side;
- a second ohmic contact in electrical communication with said semiconductor body on said second side;
- and
- an electrical-field source designed and configured to apply a static electric field across said semiconductor body, said electrical-field source including:
- a first electret located on said first side of said semiconductor body;
- and
- a second electret located on said second side of said semiconductor body;
- wherein each of said first and second ohmic contacts is designed and configured to allow said static electric field to be present across said semiconductor body.
7 more elements
A method of enhancing performance of a functional semiconductor element, comprising:
- providing the functional semiconductor element;
- and
- locating an electret-based electric field source proximate the functional semiconductor element so as to immerse said functional semiconductor element in a static electric field from the electret-based electric field source so as to enhance performance of the functional semiconductor element;
- wherein said providing the functional semiconductor element includes providing a solar cell.
1 more element
A method of enhancing performance of a functional semiconductor element, comprising:
- providing the functional semiconductor element;
- and
- locating an electret-based electric field source proximate the functional semiconductor element so as to immerse said functional semiconductor element in a static electric field from the electret-based electric field source so as to enhance performance of the functional semiconductor element;
- wherein said providing the functional semiconductor element includes providing a light-emitting diode.
1 more element
A method of modulating the width of a depletion region in a functional semiconductor element, comprising:
- providing the functional semiconductor element having the depletion region straddling a junction between a p-type semiconductor material and an n-type semiconductor material;
- and
- immersing the functional semiconductor element in a static electric field for the purpose of modulating the width of the depletion region;
- wherein:
- the functional semiconductor element is formed in a body having first and second spaced from one another on opposing sides of the junction, and said immersing the functional semiconductor element in the static electric field includes locating a first electret proximate the functional. semiconductor element on the first side of the functional semiconductor element;
- and
- said immersing the functional semiconductor element in the static electric field includes locating a second electret proximate the functional semiconductor element on the second side of the functional semiconductor element.
4 more elements
A method of modulating the width of a depletion region in a functional semiconductor element, comprising:
- providing the functional semiconductor element having the depletion region straddling a junction between a p-type semiconductor material and an n-type semiconductor material:
- and
- immersing the functional semiconductor element in a static electric field for the purposeof modulating the width of the depletion region;
- wherein said providing the functional semiconductor element includes providing a solar cell.
1 more element
A method of modulating the width of a depletion region in a functional semiconductor element, comprising:
- providing the functional semiconductor element having the depletion region straddling a junction between a p-type semiconductor material and an n-type semiconductor material:
- and
- immersin the functional semiconductor element in a static electric field for the purpose of modulating the width of the depletion region;
- wherein said providing the functional semiconductor element includes providing a light-emitting diode.
1 more element
Dependencies are inferred from the claim text.