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US 9,006,899 B2Granted
Layer stack
AssigneeInfineon Technologies AG
InventorsPaul Ganitzer, Kurt Matoy, Martin Sporn, Mark Harrison
Life of this patent
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Abstract
In one embodiment method, a first Ti based layer is deposited on the substrate. An intermediate Al based layer is deposited on the first layer, a second NiV based layer is deposited on the intermediate layer, and a third Ag based layer is deposited on the second layer. The layer stack is tempered in such a way that at least one inter-metallic phase is formed between at least two metals of the group containing Ti, Al, Ni and V.
Claims7
A layer stack, comprising:
- a first layer, wherein the first layer contains Ti and has a thickness in a range from 100 nm to 400 nm;
- an intermediate layer disposed over the first layer, wherein the intermediate layer contains Al and has a thickness in a range from 30 nm to 50 nm, wherein the Al is partly converted to an intermetallic phase with a metal from the group consisting of Ti, Ni and V;
- a second layer disposed over the intermediate layer, wherein the second layer contains NiV and has a thickness in a range from 200 nm to 400 nm;
- and
- a third layer disposed over the second layer, wherein the third layer contains Ag and has a thickness in a range from 200 nm to 600 nm.
2 more elements
Dependencies are inferred from the claim text.