Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorDong Ryeol Lee
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Abstract
A semiconductor device and a method for fabricating the same are disclosed, which can prevent migration of copper (Cu) ion when forming a Through Silicon Via (TSV). The semiconductor device includes a through silicon via (TSV) formed to pass through a semiconductor substrate; an oxide film located at a lower sidewall of the TSV; and a first prevention film formed to cover an upper portion of the TSV, an upper sidewall of the TSV, and an upper surface of the oxide film.
Claims23
A semiconductor device comprising:
- a through silicon via (TSV) configured to pass through a semiconductor substrate;
- an oxide film located over a lower sidewall of the TSV;
- a first prevention film formed to cover an upper surface of the TSV, an upper sidewall of the TSV, and an upper surface of the oxide film;
- and
- a second prevention film formed between the oxide film and a sidewall of the TSV including the upper sidewall of the TSV and the lower sidewall of TSV.
A semiconductor device comprising:
- a through silicon via (TSV) configured to pass through a semiconductor substrate;
- an oxide film located over a lower sidewall of the TSV;
- and
- a first prevention film formed to cover an upper surface of the TSV,
- wherein a portion of the first prevention film formed at an upper edge of the TSV has a sloped surface.
A semiconductor device comprising:
- a through silicon via (TSV) configured to pass through a semiconductor substrate;
- an oxide film located over a lower sidewall of the TSV and located lower than an upper surface of the semiconductor substrate;
- and
- a first prevention film formed over the TSV and the oxide film and formed between a sidewall of the TSV and the semiconductor substrate.
A semiconductor device comprising:
- a through silicon via (TSV) passing through a semiconductor substrate;
- a first prevention film provided between the through silicon via (TSV) and the semiconductor substrate;
- and
- a second prevention film formed over the through silicon via (TSV) and extending over the semiconductor substrate;
- wherein the through silicon via (TSV) is isolated from the semiconductor substrate by the first and the second prevention films.
A semiconductor device comprising:
- a through silicon via (TSV) configured to pass through a semiconductor substrate;
- an oxide film located over a lower sidewall of the TSV;
- a first Cu migration prevention film covering an upper surface of the TSV, an upper sidewall of the TSV, and an upper surface of the oxide film;
- and
- a second prevention film formed between the oxide film and a sidewall of the TSV including the upper sidewall of the TSV and the lower sidewall of TSV.
Dependencies are inferred from the claim text.