Metal gate features of semiconductor die
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHarry-Hak-Lay Chuang, Ming Zhu
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHarry-Hak-Lay Chuang, Ming Zhu
Estimating the term…
A CMOS semiconductor die comprises a substrate; an insulation layer over a major surface of the substrate; a plurality of P-metal gate areas formed within the insulation layer collectively covering a first area of the major surface; a plurality of N-metal gate areas formed within the insulation layer collectively covering a second area of the major surface, wherein a first ratio of the first area to the second area is equal to or greater than 1; a plurality of dummy P-metal gate areas formed within the insulation layer collectively covering a third area of the major surface; and a plurality of dummy N-metal gate areas formed within the insulation layer collectively covering a fourth area of the major surface, wherein a second ratio of the third area to the fourth area is substantially equal to the first ratio.
A CMOS semiconductor die comprising:
A CMOS semiconductor die comprising:
A CMOS semiconductor die comprising:
Dependencies are inferred from the claim text.