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US 9,006,853 B2Granted
Photodetector
AssigneeToyota Jidosha Kabushiki Kaisha
InventorsKota Ito, Mineki Soga, Cristiano Niclass, Radivoje S. Popovic, Marc Lany, Toshiki Kindo
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AssigneeToyota Jidosha Kabushiki Kaisha
InventorsKota Ito, Mineki Soga, Cristiano Niclass, Radivoje S. Popovic, Marc Lany, Toshiki Kindo
Estimating the term…
A photodetector disclosed herein comprises an avalanche transistor having a reference junction structure in which temperature characteristics of a current amplification factor are about the same as those of an avalanche photodiode and which is reverse-biased, and a current injection junction structure which injects a reference current to the reference junction structure and which is forward-biased. Voltages to be applied to the avalanche photodiode and the reference junction structure are controlled so that the amplification factor of the reference current amplified in the reference junction structure is retained at a predetermined value, whereby the temperature characteristics of the photodetector utilizing an avalanche effect can be stabilized.
A photodetector using an avalanche photodiode, comprising:
Dependencies are inferred from the claim text.