Solid-state imaging device with a light shielding layer formed around a transfer gate

Electronic equipment comprising

• a solid-state imaging element including a plurality of pixels, respective ones of the plurality of pixels including:
• a photoelectric conversion section;
• a transfer section configured to transfer charge generated by the photoelectric conversion section to a memory section and have a metal gate;
• an interlayer insulating film having a groove portion around the transfer section;
• a liner film disposed between the interlayer insulating film and the transfer section;
• and
• a light-shielding section disposed in the groove portion and having a substantially planar upper surface which is flush with a surface of the liner film,
• wherein respective transfer sections of the plurality of pixels are configured to simultaneously transfer charge generated by a respective photoelectric conversion section.

A manufacturing method comprising:

• forming a plurality of pixels, respectively including,
• forming a photoelectric conversion section;
• forming a metal gate of a transfer section configured to transfer charge generated by the photoelectric conversion section to a memory section;
• forming a liner film on the transfer section;
• forming an interlayer insulating film having a groove portion around the transfer section;
• and
• forming a light-shielding section in the groove portion and having a substantially planar upper surface which is flush with a surface of the liner film,
• transferring charge generated by a respective photoelectric conversion section from respective transfer sections of the plurality of pixels simultaneously.